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 FJB102 High Voltage Power Darlington Transistor
FJB102
High Voltage Power Darlington Transistor Features
* High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) * Low Collector-Emitter Saturation Voltage * High Collector-Emitter Sustaining Voltage * Monolithic Construction with Built-in Base-Emitter Shunt Resistors * Industrial Use
Equivalent Circuit C
B
1 1.Base
D2-PAK 2.Collector 3.Emitter
R1
R2 E
R1 10k R2 0.6k
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature
Value
100 100 5 8 15 1 80 150 -65 ~ 150
Units
V V V A A A W C C
* Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
FJB102
Device
FJB102
Package
D2-PAK
Reel Size
13" Dia
Tape Width
-
Quantity
800
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJB102 Rev. A
FJB102 High Voltage Power Darlington Transistor
Electrical Characteristics
Symbol
BVCEO(sus) BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(ON) Cob
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capatitance
Conditions
IC = 30mA, IB = 0 IE = 500A, IC = 0 VCB = 100V, IE = 0 VCE = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 3A VCE = 4V, IC = 8A IC = 3A, IB = 6mA IC = 8A, IB = 80mA VCE = 4V, IC = 8A VE = 10V, IE = 0, f = 1MHz
Min.
100 10
Typ.
Max
Units
V V
50 50 2 1000 200 20000 2.0 2.5 2.8 200
A A mA
V V V pF
FJB102 Rev. A
2
www.fairchildsemi.com
FJB102 High Voltage Power Darlington Transistor
Typical Performance Characteristics
Figure 1. Static Characterstic
5
Figure 2. DC Current Gain
IB = 1mA
10k
VCE = 4V
IC[A], COLLECTOR CURRENT
4
3
IB = 300A
hFE, DC CURRENT GAIN
5
1k
2
IB = 200A
1
IB = 100A
0 0 1 2 3 4
100 0.1 1 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10k
Figure 4. Collector Output Capacitance
10k
IC = 500 IB
1k
IE=0, f=1MHz
VBE(sat)
1k
Cob[pF], CAPACITANCE
10 100
100
VCE(sat)
10
100 0.1
1
1 0.1
1
10
100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Forward Biased Safe Operating Area
100
Figure 6. Power Derating
120
PC[W], COLLECTOR POWER DISSIPATION
IC[A], COLLECTOR CURRENT
1ms
10
100
DC
5ms
100s
80
1
60
40
0.1
20
0.01 0.1
0
1
10
100
0
25
50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
FJB102 Rev. A
3
www.fairchildsemi.com
FJB102 High Voltage Power Darlington Transistor
Mechanical Dimensions
D2-PAK
(0.40)
9.90
0.20
4.50
0.20
1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10
0.15
2.40
0.20
4.90 0.20
(0.75)
1.27
0.10
0.80
0.10
0
~3
+0.10
2.54 TYP
2.54 TYP 10.00 0.20 (8.00) (4.40)
0.50 -0.05
10.00
0.20
(1.75)
(7.20)
0.80
0.10
15.30 0.30
(2XR0.45)
4.90 0.20
9.20 0.20
2.54 0.30
Dimensions in Millimeters
FJB102 Rev. A
4
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16


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